High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks
作者： O. Renault , L. Fourdrinier , E. Martinez , L. Clavelier , C. Leroyer
DOI: 10.1063/1.2435512
关键词: Binding energy 、 X-ray photoelectron spectroscopy 、 Resolution (electron density) 、 Materials science 、 Synchrotron radiation 、 Radiation 、 Optoelectronics 、 Heterojunction 、 Atomic physics 、 Spectral component 、 Germanium
摘要: High-resolution photoelectron spectroscopy with synchrotron radiation (energy resolution of 50meV) is used to investigate interfacial properties Ge∕GeOx (1nm)∕HfO2 (1nm) gate stacks. With soft x rays, a reliable Ge3d core-level study possible thanks the much lower cross section Hf5p core level than that using AlKα radiation. It clearly shown Hf-germanate bonding states are formed at GeOx∕HfO2 interface, an additional spectral component shifted binding energy relative GeO2.
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