Investigation on the dominant key to achieve superior Ge surface passivation by GeO x based on the ozone oxidation
作者： Xiaolei Wang , Jinjuan Xiang , Wenwu Wang , Yuhua Xiong , Jing Zhang
DOI: 10.1016/J.APSUSC.2015.09.084
关键词: Equivalent oxide thickness 、 Scaling 、 Layer (electronics) 、 X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Oxide 、 Materials science 、 Passivation 、 Dangling bond 、 Thermal conduction
摘要: Abstract The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. interface state density ( D it ) measured from low temperature conduction method found decrease with increasing the thickness (0.26–1.06 nm). X-ray photoelectron spectroscopy (XPS) employed demonstrate structure of /Ge different thicknesses. And XPS results show that 3+ oxide component responsible due effective dangling bonds. Therefore, formation for gate stacks. Our work confirms same physical mechanism determines regardless oxidation methods grow layer. As a result, explore growth process can realize sufficient in interlayer as thin possible important both equivalent scaling and property simultaneously. This conclusion helpful engineer optimization
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