$\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon

摘要: The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based the electrical properties a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate effect temperature Ge quality. Prior high-k dielectric deposition, various surface treatments applied determine leakage current density using scanning tunneling microscopy. interface trap (Dit) and obtained from C-V I-V measurements MOSCAP, as well threading dislocation (TDD), show linear relationship with temperature. It found that undergoes highest 825°C treatment ultraviolet ozone, followed by oxynitride (GeOxNy) formation, demonstrates lowest ~ 2.3×10-8 A/cm2 (at -2 V), Dit 3.5 × 1011 cm-2/V, TDD <; 107 cm-2.