Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy
作者： Aheli Ghosh , Michael B. Clavel , Peter D. Nguyen , Michael A. Meeker , Giti A. Khodaparast
DOI: 10.1063/1.4993446
关键词: Electron mobility 、 Heterojunction 、 Materials science 、 Silicon 、 Ionized impurity scattering 、 Hall effect 、 Transmission electron microscopy 、 Optoelectronics 、 Germanium 、 Molecular beam epitaxy
摘要: The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ∼0.10% tensile-strained epilayer, owing to the thermal expansion coefficient mismatch between Si, negligible epilayer lattice tilt. Micro-Raman spectroscopic corroborated strain-state thin-film. Cross-sectional transmission electron microscopy revealed formation 90 ° Lomer dislocation network at Ge/Si heterointerface, suggesting rapid complete relaxation during growth. Atomic force micrographs exhibited smooth surface morphology with roughness < 2 nm. Temperature dependent Hall mobility measurements modelling thereof indicated that ionized impurity scattering limited carrier in layer. Capacitance- conductance-voltage performed determine effect densi...
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