Optimization of controlled two-step liquid phase crystallization of Ge-on-Si
作者： Sandeep Kumar , Pankaj Kumar , Khushboo Kumari , Sushobhan Avasthi
DOI: 10.1109/ICEE44586.2018.8937975
关键词:
摘要: This work presents a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates. The starts with amorphous Ge films (100) substrate which is subjected to annealing process. In the first step, are heated 950°C 5 minutes, temperature above melting point of Ge. Next allowed cool down 930°C and maintained at that 1 hours respectively in order check its effect mins 2 shows optimum conditions achieve highly crystalline films. surface morphologies annealed samples were characterized using scanning electron microscopy grain sizes ranging from 2-5 $\mu$m. crystallinity was confirmed Raman spectroscopy x-ray diffraction (XRD) measurements. Theta/2-theta XRD measurements show peak Ge(400) 66.3°. degree orientations along plane further evaluated rocking curve full-width half maximum height value 0.08° (or 288 arc sec) this condition.
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