High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation.
作者： Bongkwon Son , Yiding Lin , Kwang Hong Lee , Yue Wang , Shaoteng Wu
DOI: 10.1364/OE.398199
关键词:
摘要: Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at −1 V. A germanium-on-insulator (GOI) platform a 200-mm wafer scale was realized for photodetector fabrication via direct bonding and layer transfer techniques, followed by oxygen annealing in finance. thin germanium-oxide (GeOx) formed on the sidewall ozone oxidation to suppress surface leakage current. The responsivity annealed GOI revealed be 0.42 0.28 A/W 1,500 1,550 nm V, respectively. characteristics are investigated comparison SiO2 passivation. is reduced factor 10 oxidation. 3dB bandwidth 1.72 GHz V GeOx surface-passivated enhanced approximately 2 times compared one photodetectors. theoretically expected further enhance ∼70 5 µm mesa diameter.
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Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Yuhua Xiong, Jing Zhang, Chao Zhao, Investigation on the dominant key to achieve superior Ge surface passivation by GeO x based on the ozone oxidation Applied Surface Science. ,vol. 357, pp. 1857- 1862 ,(2015) , 10.1016/J.APSUSC.2015.09.084
Silvia Famà, Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto, Hsin-Chiao Luan, High performance germanium-on-silicon detectors for optical communications Applied Physics Letters. ,vol. 81, pp. 586- 588 ,(2002) , 10.1063/1.1496492
Bi-Hui Lee, Kai-Min Yin, Matthias Passlack, Carlos H. Diaz, Mark J. H. van Dal, Georgios Vellianitis, Blandine Duriez, Gerben Doornbos, Chih-Hua Hsieh, Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping IEEE Transactions on Electron Devices. ,vol. 61, pp. 430- 436 ,(2014) , 10.1109/TED.2013.2295883
Jifeng Liu, Douglas D. Cannon, Kazumi Wada, Yasuhiko Ishikawa, Samerkhae Jongthammanurak, David T. Danielson, Jurgen Michel, Lionel C. Kimerling, Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications Applied Physics Letters. ,vol. 87, pp. 011110- ,(2005) , 10.1063/1.1993749
Zhiwen Zhou, Jingkai He, Ruichun Wang, Cheng Li, Jinzhong Yu, Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition Optics Communications. ,vol. 283, pp. 3404- 3407 ,(2010) , 10.1016/J.OPTCOM.2010.04.098
Geert Eneman, Mireia Bargallo Gonzalez, Geert Hellings, Brice De Jaeger, Gang Wang, Jerome Mitard, Kristin DeMeyer, Cor Claeys, Marc Meuris, Marc Heyns, Thomas Hoffmann, Eddy Simoen, Trap-Assisted Tunneling in Deep-Submicron Ge pFET Junctions Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2. ,vol. 28, pp. 143- 152 ,(2010) , 10.1149/1.3367946
Xue Hai-Yun, Xue Chun-Lai, Cheng Bu-Wen, Yu Yu-De, Wang Qi-Ming, Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm ⁄ Chinese Physics B. ,vol. 18, pp. 2542- 2544 ,(2009) , 10.1088/1674-1056/18/6/070
M.B. Gonzalez, E. Simoen, G. Eneman, B. De Jaeger, G. Wang, R. Loo, C. Claeys, Defect assessment and leakage control in Ge junctions Microelectronic Engineering. ,vol. 125, pp. 33- 37 ,(2014) , 10.1016/J.MEE.2014.01.012
N. A. DiLello, D. K. Johnstone, J. L. Hoyt, Characterization of dark current in Ge-on-Si photodiodes Journal of Applied Physics. ,vol. 112, pp. 054506- ,(2012) , 10.1063/1.4749259
R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi, Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation Applied Physics Letters. ,vol. 98, pp. 112902- ,(2011) , 10.1063/1.3564902