Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
作者： Y Barnscheidt , J Schmidt , G Wetzel , D Tetzlaff , T F Wietler
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(53)
H. J. Osten, E. Bugiel, Relaxed Si1−xGex/Si1−x−yGexCy buffer structures with low threading dislocation density Applied Physics Letters. ,vol. 70, pp. 2813- 2815 ,(1997) , 10.1063/1.119067
Linus Pauling, The Nature of the Chemical Bond ,(1939)
J. Kucytowski, K. Wokulska, Lattice parameter measurements of boron doped Si single crystals Crystal Research and Technology. ,vol. 40, pp. 424- 428 ,(2005) , 10.1002/CRAT.200410361
J. H. Parker, D. W. Feldman, M. Ashkin, Raman Scattering by Silicon and Germanium Physical Review. ,vol. 155, pp. 712- 714 ,(1967) , 10.1103/PHYSREV.155.712
S. Mirabella, G. Impellizzeri, A. M. Piro, E. Bruno, M. G. Grimaldi, Activation and carrier mobility in high fluence B implanted germanium Applied Physics Letters. ,vol. 92, pp. 251909- ,(2008) , 10.1063/1.2949088
M R Sardela, H H Radamson, J O Ekberg, J -E Sundgren, G V Hansson, Relation between electrical activation and the B-induced strain in Si determined by reciprocal lattice mapping Semiconductor Science and Technology. ,vol. 9, pp. 1272- 1275 ,(1994) , 10.1088/0268-1242/9/6/020
H. J. McSkimin, P. Andreatch, Elastic Moduli of Germanium Versus Hydrostatic Pressure at 25.0°C and −195.8°C Journal of Applied Physics. ,vol. 34, pp. 651- 655 ,(1963) , 10.1063/1.1729323
H. Holloway, S. L. McCarthy, Determination of the lattice contraction of boron-doped silicon Journal of Applied Physics. ,vol. 73, pp. 103- 111 ,(1993) , 10.1063/1.353886
Robert Hull, John C. Bean, Misfit dislocations in lattice-mismatched epitaxial films Critical Reviews in Solid State and Materials Sciences. ,vol. 17, pp. 507- 546 ,(1992) , 10.1080/10408439208244585
G. Celotti, D. Nobili, P. Ostoja, Lattice parameter study of silicon uniformly doped with boron and phosphorus Journal of Materials Science. ,vol. 9, pp. 821- 828 ,(1974) , 10.1007/BF00761802