Millimeter-wave low-noise high electron mobility transistors
作者： P.C. Chao , S.C. Palmateer , P.M. Smith , U.K. Mishra , K.H.G. Duh
关键词: Transconductance 、 Field-effect transistor 、 Optoelectronics 、 Cutoff frequency 、 Extremely high frequency 、 High-electron-mobility transistor 、 Physics 、 Noise figure 、 Noise (electronics) 、 Electrical engineering 、 Transistor
摘要: High electron mobility transistors (HEMT's) have been fabricated which demonstrate excellent millimeter-wave performance. A maximum extrinsic transconductance as high 430 mS/mm, corresponding to an intrinsic of 580 was observed in these transistors. unity current gain cutoff frequency f T 80 GHz and a oscillation f_{\max} 120 were projected for HEMT's. At 40 GHz, minimum noise figure 2.1 dB with associated 7.0 has also measured. These are the highest f_{T}, , best performance reported date. The results clearly potential HEMT's low-noise applications.
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