Technology for III/V-Semiconductor HFET Devices
作者： Werner Prost
DOI: 10.1016/B978-0-444-88990-4.50010-6
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摘要: Publisher Summary This chapter discusses the new type offield-effecttransistor(FET), which is made ofdifferentsemiconductormaterials. The basic structure of HFETs was modified according to special applications. Some these modifications are:(i)introduction highly doped cap layer reduce source resistance at room temperature,(ii)multiple channel quantum well for high current and power, (iii)inverted structures with on top achieve transconductance combined a planar technology, (iv)introduction planar(δ-) doping technology donor layer. Undoped sequences insulated gate (HIGFET) were developed in order monolithically implement both n-and p-channel same substrate. Modulation characterized low temperatures. performance HFET devices limited due material properties device technology. InP suffer from lower energy barrier towards less resistive substrate comparison GaAs system. kink-effect DC-output characteristics pronounced electric fields present short devices.
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