Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors
作者： Michael Shur
DOI: 10.1049/EL:19760470
关键词:
摘要: A simple model which describes well the nonequilibrium electron transport in GaAs using fit to equilibrium Monte Carlo data is suggested. In frame of this model, cutoff-frequency/gate-length curves are calculated for uniform and nonuniform channel field distribution f.e.t.s. The results show that nonhomogeneity electric can considerably decrease (by 30%) maximal frequency
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