The temperature dependence of atomic incorporation characteristics in growing GaInNAs films
作者： Jingling Li , Shuguang Zhang , Fangliang Gao , Lei Wen , Shizhong Zhou
DOI: 10.1063/1.4907569
关键词: X-ray crystallography 、 Diffraction 、 Scanning electron microscope 、 Gallium arsenide 、 X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Adsorption 、 Mass spectrometry 、 Chemistry 、 Indium
摘要: We have systematically studied the temperature dependence of incorporation characteristics nitrogen (N) and indium (In) in growing GaInNAs films. With implementation Monte-Carlo simulation, low N adsorption energy (−0.10 eV) is demonstrated. To understand atomic mechanism, interactions between Group-III V elements are subsequently discussed. find that In behaviors rather than more sensitive to Tg, which can be experimentally verified by exploring compositional modulation structural changes films means high-resolution X-ray diffraction, photoelectron spectroscopy, scanning electron microscope, secondary ion mass spectroscopy.
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