Characteristics of high-purity Cu thin films deposited on polyimide by radio-frequency Ar/H2 atmospheric-pressure plasma jet

作者: P. Zhao , W. Zheng , Y. D. Meng , M. Nagatsu

DOI: 10.1063/1.4795808

关键词: Atmospheric-pressure plasmaEvaporation (deposition)Ion platingHydrogenPolyimideMaterials scienceAnalytical chemistryCopper oxideThin filmAuger electron spectroscopy

摘要: With a view to fabricating future flexible electronic devices, an atmospheric-pressure plasma jet driven by 13.56 MHz radio-frequency power is developed for depositing Cu thin films on polyimide, where wire inserted inside the quartz tube was used as evaporation source. A polyimide substrate placed water-cooled copper heat sink prevent it from being thermally damaged. aim of preventing oxidation deposited film, we investigated effect adding H2 Ar film characteristics. Theoretical fitting OH emission line in OES spectrum revealed that gas significantly increased rotational temperature roughly 800 1500 K. The LMM Auger spectroscopy analysis higher-purity were synthesized hydrogen gas. possible explanation enhancement deposition rate and improvement purity addition atomic produced plays important roles heating promote atoms removing oxygen oxide components via reduction reaction.

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