High voltage mosgated device with trenches to reduce on-resistance

作者： Jr. Milton J. Boden

DOI:

关键词: High voltage 、 Electrical engineering 、 Materials science 、 Layer (electronics) 、 Optoelectronics 、 Conductivity 、 On resistance 、 Thermal conduction 、 Voltage

摘要: Parallel, spaced SIPOS (semi-insulating polysilicon) filled trenches extend vertically through the epi layer of a MOSgated device and act to deplete carriers from vertical conduction volume between during voltage blocking conditions. Thus, higher conductivity can be used reduce RDSON (Drain Source ON resistance) for given break down voltage.

google.com 本地加速

freepatentsonline.com 本地加速

google.co.in PDF 下载加速

lens.org UNKNOWN 下载加速

freepatentsonline.com UNKNOWN 下载加速

参考文章(8)

William F. Cantarini, Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers ,(1995)

Ming L. Tarng, Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions ,(1980)

Xingbi Chen, Semiconductor power devices with alternating conductivity type high-voltage breakdown regions ,(1991)

Helmut Strack, Jenö Tihanyi, Heinrich Geiger, Field effect-controlled semiconductor component ,(1997)

Stephane Manzoni, Mechanism with torque-limiting device for controlling a rearview mirror ,(1987)

Satwinder Malhi, Vertical transistor having top and bottom surface isolation ,(1995)

Maabuin Ii Geinzu, Richiyaado Tee Pandozuitsuku, Kaaru Ee Kotsupu Jiyuniya, DUAL CYLINDER REFRIGERANT COMPRESSOR AND PISTON RING DEVICE THEREFOR ,(1982)

David J. Coe, High voltage semiconductor device ,(1984)