Vertical power devices having insulated source electrodes in discontinuous deep trenches

摘要: Vertical power devices include a semiconductor substrate having first surface thereon and drift region of conductivity type therein. A quad arrangement trenches are provided that extend into the define mesa therebetween. base second is included. The extends forms P-N rectifying junction therewith. source insulated electrodes in trenches. An gate on mesa. electrode also surface. electrically connected to regions electrodes.