Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO x/TiN structure and quantum conductance through evidence of H 2 O 2 sensing mechanism

摘要: Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba material, which is responsible tunable more than 10 resistance varying negative stop owing to slow decay value slope (217.39 mV/decade). Quantum phenomenon observed staircase cycle memory devices. By inspecting Ba+ Ba2+ through measuring H2O2 a low concentration 1 nM electrolyte/BaTiOx/SiO2/p-Si structure, mechanism each HRS level as well explained gradual dissolution oxygen vacancy filament. Along multi-level, current compliance dependent also demonstrated ratio up 2000 achieved even thin (<5 nm) material. considering oxidation-reduction conducting filaments, current-voltage curve simulated well. Hence, implies promising applications high dense, multistate non-volatile memories near future.