Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs
作者： Eun Kyu Kim , Hoon Young Cho , Suk‐Ki Min , Sung Ho Choh , Susumu Namba
DOI: 10.1063/1.345692
关键词: Chemistry 、 Electron 、 Schottky barrier 、 Time constant 、 Annealing (metallurgy) 、 Band gap 、 Crystallographic defect 、 Analytical chemistry 、 Capacitance 、 Spectroscopy 、 Condensed matter physics
摘要: The leakage current effects for the midgap levels in electron‐beam‐metallized (EBM) Al/GaAs junction were studied by isothermal capacitance transient spectroscopy. In this junction, a new electron deep level which might be due to surface defects induced during EBM process was detected. observed thermal emission time constants of and EL2 (Ec −0.81 eV) EBM‐Al/GaAs increased low‐temperature annealing up 355 °C, while density decreased down about 4×10−7 A/cm2. We represent that these behaviors could well explained effect Schottky junction.
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N. Newman, K. K. Chin, W. G. Petro, T. Kendelewicz, M. D. Williams, C. E. McCants, W. E. Spicer, Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers Journal of Vacuum Science and Technology. ,vol. 3, pp. 996- 1001 ,(1985) , 10.1116/1.573374
M. C. Chen, D. V. Lang, W. C. Dautremont‐Smith, A. M. Sergent, J. P. Harbison, Effects of leakage current on deep level transient spectroscopy Applied Physics Letters. ,vol. 44, pp. 790- 792 ,(1984) , 10.1063/1.94887
C. H. Henry, D. V. Lang, Nonradiative capture and recombination by multiphonon emission in GaAs and GaP Physical Review B. ,vol. 15, pp. 989- 1016 ,(1977) , 10.1103/PHYSREVB.15.989
D Pons, J C Bourgoin, Irradiation-induced defects in GaAs Journal of Physics C: Solid State Physics. ,vol. 18, pp. 3839- 3871 ,(1985) , 10.1088/0022-3719/18/20/012
Hajime Tomokage, Tokuo Miyamoto, A Modified Method of Isothermal Capacitance Transient Spectroscopy Japanese Journal of Applied Physics. ,vol. 24, pp. 381- 382 ,(1985) , 10.1143/JJAP.24.381
Hideyo Okushi, Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy Philosophical Magazine Part B. ,vol. 52, pp. 33- 57 ,(1985) , 10.1080/13642818508243164
S. Y. Chiang, G. L. Pearson, Properties of vacancy defects in GaAs single crystals Journal of Applied Physics. ,vol. 46, pp. 2986- 2991 ,(1975) , 10.1063/1.321985
Yoshihiko Yuba, Characterization of ion beam etching induced defects in GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 6, pp. 253- 256 ,(1988) , 10.1116/1.584017
H. L. Evans, E. S. Yang, Q. Y. Ma, M. T. Schmidt, X. Wu, Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy Journal of Applied Physics. ,vol. 64, pp. 2469- 2472 ,(1988) , 10.1063/1.341655
Hideyo Okushi, Yozo Tokumaru, Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters Japanese Journal of Applied Physics. ,vol. 19, ,(1980) , 10.1143/JJAP.19.L335