Deep levels in GaAs grown on Si during rapid thermal annealing
作者： Hoon Young Cho , Eun Kyu Kim , Yong Kim , Suk‐Ki Min , Ju Hoon Yoon
DOI: 10.1063/1.102705
关键词: Thermal expansion 、 Silicon 、 Inorganic compound 、 Mineralogy 、 Analytical chemistry 、 Materials science 、 Metalorganic vapour phase epitaxy 、 Chemical vapor deposition 、 Infrared 、 Annealing (metallurgy) 、 Impurity
摘要: Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For layers after annealing at 850 °C for 20 s, three electron deep 0.36, 0.27, and 0.20 eV below the conduction band created as dominant levels. Especially, 0.36 level was found to increase up 40% of donor concentration thickness increased. These results indicate that may induce high‐density due a biaxial tensile stress caused difference expansion coefficients.
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