Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors

摘要: The III–V semiconductors GaAs, InP, and related ternary compounds are important for making sensors, solid-state lasers, high-frequency devices, integrated circuits [1, 2]. They have unique promising optical electrophysical properties compared to silicon germanium. However, their utilization is limited by the dramatic influence that thermal processes employed during device fabrication on these based primarily decomposition incongruent component evaporation at high temperatures. RTP has become one of effective ways resolve this problem semiconductor [3], most acceptable processing conditions in heat balance regime, because minimal temperature gradients simplicity. Overall, a short time, typically seconds, been found optimal best doped layers [4–6].