Effects of heat treatments of GaAs on the near‐surface distribution of EL2 defects
作者： K. Wada , N. Inoue
DOI: 10.1063/1.95937
关键词:
摘要: A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of thermal donor formation silicon. Anomalous depth profiles defects bulk created by heat treatment have been quantitatively explained, assuming four point cluster. Possible candidates are discussed.
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