Abnormal behavior of midgap electron trap in HB‐GaAs during thermal annealing
作者： Suk‐Ki Min , Eun Kyu Kim , Hoon Young Cho
DOI: 10.1063/1.340187
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摘要: The behavior of the EL2 family in horizontal Bridgman‐(HB) grown GaAs by two thermal annealing methods, furnace and rapid annealing, was studied through deep level transient spectroscopy (DLTS) measurements, a similar another group electron traps observed. As time is increased, trap (Ec‐0.81 eV) transformed to new trap, EX2 (Ec‐0.73 eV), finally other EX1 (Ec‐0.86 eV). Also EL6 (Ec‐0.18, 0.22, 0.27, 0.35 varied similarly as (Ec‐0.27 first (Ec‐0.18 then second (Ec‐0.22 This result revealed that related group. From study photocapacitance quenching, existence metastable states identified. These results suggest atomic structure may be an arsenic antisite with interstitial double vacancy, such VAsAsIVGaAsGa or its complex.
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