On the microscopic structure of the EL6 defect in GaAs
作者： Th. Steinegger , B. Gründig-Wendrock , M. Jurisch , J.R. Niklas
DOI: 10.1016/S0921-4526(01)00799-2
关键词: Annealing (metallurgy) 、 Infrared spectroscopy 、 Defect engineering 、 Semiconductor materials 、 Materials science 、 Atomic physics 、 Laser scattering 、 Positron annihilation 、 Condensed matter physics
摘要: Abstract Among the intrinsic defects in GaAs EL6 gains more attention due to its properties as a non-radiative recombination centre. Also, for an efficient defect engineering atomistic structure becomes important question. There are many suggestions this literature, however, nothing definite is known so far. From combination of results from PICTS experiments measure concentration, positron annihilation, infrared absorption and laser scattering tomography arguments put forward which point AsGa–VAs EL6.
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Z.-Q. Fang, D.C. Look, S. Kuisma, K. Saarinen, P. Hautojarvi, Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies Proceedings of Semiconducting and Semi-Insulating Materials Conference. pp. 149- 154 ,(1996) , 10.1109/SIM.1996.570928
H. S. Leipner, R. Krause-Rehberg, Positron annihilation in semiconductors : defect studies Springer. ,(2003)
J. W. Orton, Peter Blood, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States ,(1992)
J. Darmo, F. Dubecký, P. Kordoš, A. Förster, Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs Applied Physics Letters. ,vol. 72, pp. 590- 592 ,(1998) , 10.1063/1.120815
C. V. Reddy, S. Fung, C. D. Beling, Nature of the bulk defects in GaAs through high-temperature quenching studies Physical Review B. ,vol. 54, pp. 11290- 11297 ,(1996) , 10.1103/PHYSREVB.54.11290
T Hashizume, H Nagabuchi, Characterisation of deep electron states in LEC grown GaAs material Semiconductor Science and Technology. ,vol. 4, pp. 427- 434 ,(1989) , 10.1088/0268-1242/4/6/002
Zhao‐Qiang Fang, T. E. Schlesinger, A. G. Milnes, Evidence for EL6 (Ec− 0.35 eV) acting as a dominant recombination center in n‐type horizontal Bridgman GaAs Journal of Applied Physics. ,vol. 61, pp. 5047- 5050 ,(1987) , 10.1063/1.338327
S. Reichlmaier, K. Löhnert, M. Baumgartner, Undoped Semi-Insulating GaAs of Very Low Residual Acceptor Concentration Japanese Journal of Applied Physics. ,vol. 27, pp. 2329- 2332 ,(1988) , 10.1143/JJAP.27.2329
N. M. Haegel, A. Winnacker, K. Leo, W. W. Rühle, S. Gisdakis, Effects of annealing on lifetime and deep‐level photoluminescence in semi‐insulating gallium arsenide Journal of Applied Physics. ,vol. 62, pp. 2946- 2949 ,(1987) , 10.1063/1.339378
Z.‐Q. Fang, D. C. Look, Photoquenching and thermal recovery of a thermally stimulated current peak in semi‐insulating GaAs Journal of Applied Physics. ,vol. 73, pp. 4971- 4974 ,(1993) , 10.1063/1.353816