Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies
作者： Z.-Q. Fang , D.C. Look , S. Kuisma , K. Saarinen , P. Hautojarvi
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摘要: Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze high- low-pressure liquid encapsulated Czochralski techniques have been studied positron annihilation (PAS) thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between concentrations of TSC T/sub 2/ (0.63 eV) 5/ (0.35 eV), PAS identified-defects As/sub Ga/ V/sub As/, A correlation concentration intrinsic acceptors (V/sub Ga/sub As/) measured PAS, total acceptor infrared absorption, is also found.
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