Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs
作者： Z. -Q. Fang , D. C. Look , R. L. Jones
DOI: 10.1007/S11664-997-0064-1
关键词: Thermally stimulated current spectroscopy 、 Current (fluid) 、 Spectral line 、 Activation energy 、 Solid-state physics 、 Analytical chemistry 、 Trap (computing) 、 Molecular physics 、 Deep-level transient spectroscopy 、 Photoluminescence 、 Materials science
摘要: In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap Ta at 170K is sometimes observed. The activation energy and capture cross section are 0.43 eV 3.7×10−15 cm2, respectively. Based on good correlation with Cu-related photoluminescence emission 1.36 deep level transient spectroscopy hole traps HL4 HB4, we argue that trap.
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