Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
作者： K Kuldová , M Molas , J Borysiuk , A Babiński , Z Výborný
DOI: 10.1088/1742-6596/245/1/012079
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摘要: In this communication we report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs dots (QDs) GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention sharp emission lines, which appear both at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution single excitons as well biexcitons. Negative binding energy biexcitons systematic dependence was observed. It has been proposed that investigated lines result from radiative recombination flat non-fully developed QDs structure. The is by transmission electron microscopic analysis structures.
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