Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates.

摘要: Deep-level defects in semi-insulating (S.I.) liquid-encapsulated Czochralski (LEC) GaAs substrates were studied using the thermally stimulated current (TSC) technique. From heat-treatment temperature dependence of TSC signal intensity and electrical properties, thermal behavior detected with respect to heat treatment their correlation properties substrate clarified for first time. The change resistivity was closely related changes T3 (trap depth: 0.31 eV), T6 (0.58 eV) T x (0.29 eV). net concentration these changed by 4×1014 cm-3 after at 800°C, leading a threefold increase resistivity. Precise control is very important consistently obtaining high-quality substrates.