Hole traps in bulk and epitaxial GaAs crystals
作者： A. Mitonneau , G.M. Martin , A. Mircea
DOI: 10.1049/EL:19770473
关键词:
摘要: Twelve different hole traps have been characterised in v.p.e., 1.p.e., m.b.e. and bulk-grown GaAs from d.1.t.s. experiments. Most are related to the presence of impurities, some which identified. Although far complete, this catalogue can be a working tool, particularly for assessment impurity contamination material.
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sci-hub.se 参考文章(1)
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