Deep-Level Effects in GaAs Microelectronics: A Review
作者： N. P. Khuchua , L. V. Khvedelidze , M. G. Tigishvili , N. B. Gorev , E. N. Privalov
关键词:
摘要: A considerable body of research literature on deep centers in GaAs is analyzed. It shown that the issue remains most relevant to microelectronics. Data are discussed nature bulk-grown and epitaxial forms GaAs, whether ion-implanted or undoped. Methods for characterization described. Theoretical models representing influence parameters devices ICs considered. Particular coverage given backgating. Practical recommendations reviewed controlling adverse effects performance ICs.
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sci-hub.se 参考文章(69)
Michael Shur, GaAs devices and circuits ,(1987)
Peter Mark, Murray A. Lampert, Current injection in solids ,(1970)
Sokrates T. Pantelides, Deep centers in semiconductors : a state of the art approach Gordon and Breach Science Publishers. ,(1986)
Masayuki Katayama, Akira Usami, Takao Wada, Yutaka Tokuda, Variations of electron traps in bulk n‐GaAs by rapid thermal processing Journal of Applied Physics. ,vol. 62, pp. 528- 533 ,(1987) , 10.1063/1.339778
J.A. Reynoso-Hernandez, L. Escotte, R. Plana, J. Graffeuil, Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance Electronics Letters. ,vol. 31, pp. 677- 678 ,(1995) , 10.1049/EL:19950465
N. C. Halder, X. Zhao, More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs Journal of Vacuum Science & Technology B. ,vol. 17, pp. 2019- 2024 ,(1999) , 10.1116/1.591032
J. Gyulai, J. W. Mayer, I. V. Mitchell, V. Rodriguez, OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE Applied Physics Letters. ,vol. 17, pp. 332- 334 ,(1970) , 10.1063/1.1653422
F.D. Auret, M. Nel, A.W.R. Leitch, A comparison of deep level defects in OMVPE GaAs layers grown on various GaAs substrate types Journal of Crystal Growth. ,vol. 89, pp. 308- 312 ,(1988) , 10.1016/0022-0248(88)90415-0
N. Sengouga, B.K. Jones, Modeling the transient response of channel-substrate interface traps to gate voltage steps in GaAs FETs Solid-State Electronics. ,vol. 36, pp. 229- 236 ,(1993) , 10.1016/0038-1101(93)90145-G
A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, N. Otsuka, Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy Applied Physics Letters. ,vol. 57, pp. 1331- 1333 ,(1990) , 10.1063/1.103474