Modeling the transient response of channel-substrate interface traps to gate voltage steps in GaAs FETs
作者： N. Sengouga , B.K. Jones
DOI: 10.1016/0038-1101(93)90145-G
关键词: Pulse (physics) 、 Optoelectronics 、 Transient (oscillation) 、 Buffer (optical fiber) 、 Electrical engineering 、 Fermi level 、 Communication channel 、 Substrate (electronics) 、 Transient response 、 Trap (computing) 、 Materials science
摘要: Abstract The transient response of a hole trap, located in the substrate (buffer) side channel-substrate interface GaAs FETs, to pulse applied gate is accurately modelled. modelled found be non-exponential and excellent agreement with experimental data. similarity between filling emptying rates traps explained terms very close position Fermi level (buffer), where trap located, that level.
harvard.edu
elsevier.com
sci-hub.se 参考文章(19)
Hideyo Okushi, Yozo Tokumaru, A Modulated DLTS Method for Large Signal Analysis (C2-DLTS) Japanese Journal of Applied Physics. ,vol. 20, pp. L45- L47 ,(1981) , 10.1143/JJAP.20.L45
Y. M. Houng, G. L. Pearson, Deep trapping effects at the GaAs‐GaAs : Cr interface in GaAs FET structures Journal of Applied Physics. ,vol. 49, pp. 3348- 3352 ,(1978) , 10.1063/1.325290
Gongjiu Jin, B K Jones, A conductance DLTS system to analyse multiple exponential decays Semiconductor Science and Technology. ,vol. 3, pp. 1083- 1093 ,(1988) , 10.1088/0268-1242/3/11/002
M.S. Birrittella, W.C. Seelbach, H. Goronkin, The effect of backgating on the design and performance of GaAs digital integrated circuits IEEE Transactions on Electron Devices. ,vol. 29, pp. 1135- 1142 ,(1982) , 10.1109/T-ED.1982.20845
G.P. Li, K.L. Wang, The use of spatially-dependent carrier capture rates for deep-level-defect transient studies Solid-state Electronics. ,vol. 26, pp. 825- 833 ,(1983) , 10.1016/0038-1101(83)90052-7
S.R. Blight, R.H. Wallis, H. Thomas, Influence of device geometry on conductance DLTS spectra of GaAs MESFETs Electronics Letters. ,vol. 22, pp. 47- 48 ,(1986) , 10.1049/EL:19860032
M.A. Abdala, B.K. Jones, Low frequency oscillations in GaAs MESFETs Solid-State Electronics. ,vol. 36, pp. 237- 245 ,(1993) , 10.1016/0038-1101(93)90146-H
D. Pons, Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods Journal of Applied Physics. ,vol. 55, pp. 3644- 3657 ,(1984) , 10.1063/1.332914
H. Goronkin, M.S. Birrittella, W.C. Seelbach, R.L. Vaitkus, Backgating and light sensitivity in ion-implanted GaAs integrated circuits IEEE Transactions on Electron Devices. ,vol. 29, pp. 845- 850 ,(1982) , 10.1109/T-ED.1982.20789
Gongjiu Jin, B K Jones, Characterisation of the time-dependent properties of GaAs FETs Semiconductor Science and Technology. ,vol. 5, pp. 395- 403 ,(1990) , 10.1088/0268-1242/5/5/004