Variations of electron traps in bulk n‐GaAs by rapid thermal processing
作者： Masayuki Katayama , Akira Usami , Takao Wada , Yutaka Tokuda
DOI: 10.1063/1.339778
关键词:
摘要: Rapid thermal processing (RTP) using halogen lamps for liquid encapsulated Czochralski grown GaAs doped with Si has been studied by deep‐level transient spectroscopy, capacitance‐voltage, and photoluminescence measurements. RTP is performed at 700, 800, 900 °C 6 s without SiO2 encapsulation. Three electron traps ED1(Ec −0.26 eV), ED2(Ec −0.49 ED3(Ec −0.55 eV) are produced depending on conditions. The trap ED1 observed in all samples, its depth profiles vary decrease of the shallow donor concentration occurs samples above 800 °C, especially those It thought that these results, which peculiar to method, related production As interstitials vacancies large stress induced rapid heating RTP. EL2(Ec −0.81 not as reported furnace processing. This due effect short‐...
harvard.edu
scitation.org
aip.org 
sci-hub.se 参考文章(18)
Yutaka Tokuda, Nobuyuki Shimizu, Akira Usami, Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy Japanese Journal of Applied Physics. ,vol. 18, pp. 309- 315 ,(1979) , 10.1143/JJAP.18.309
H. Kohzu, M. Kuzuhara, Y. Takayama, Infrared rapid thermal annealing for GaAs device fabrication Journal of Applied Physics. ,vol. 54, pp. 4998- 5003 ,(1983) , 10.1063/1.332767
R. S. Bhattacharya, P. P. Pronko, Y. K. Yeo, A. K. Rai, Y. S. Park, J. Narayan, Fluence dependence of displacement damage, residual defects, and electrical properties of high‐temperature‐annealed Se+‐implanted GaAs Journal of Applied Physics. ,vol. 53, pp. 4821- 4825 ,(1982) , 10.1063/1.331357
M. Kuzuhara, T. Nozaki, Study of electron traps in n-GaAs resulting from infrared rapid thermal annealing Journal of Applied Physics. ,vol. 59, pp. 3131- 3136 ,(1986) , 10.1063/1.336891
Akio Kitagawa, Akira Usami, Takao Wada, Yutaka Tokuda, Hiroyuki Kano, Production of the midgap electron trap (EL2) in molecular‐beam‐epitaxial GaAs by rapid thermal processing Journal of Applied Physics. ,vol. 61, pp. 1215- 1217 ,(1987) , 10.1063/1.338172
R. G. Wilson, C. A. Evans, J. C Norberg, C. G. Hopkins, Y. S. Park, Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs Journal of Applied Physics. ,vol. 54, pp. 6868- 6874 ,(1983) , 10.1063/1.331991
J. Narayan, O. W. Holland, Rapid thermal annealing of ion‐implanted semiconductors Journal of Applied Physics. ,vol. 56, pp. 2913- 2921 ,(1984) , 10.1063/1.333831
A Usami, M Katayama, Y Tokuda, T Wada, Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon Semiconductor Science and Technology. ,vol. 2, pp. 83- 87 ,(1987) , 10.1088/0268-1242/2/2/003
G.M. Martin, A. Mitonneau, A. Mircea, Electron traps in bulk and epitaxial GaAs crystals Electronics Letters. ,vol. 13, pp. 191- 193 ,(1977) , 10.1049/EL:19770140
S. Makram‐Ebeid, D. Gautard, P. Devillard, G. M. Martin, Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment Applied Physics Letters. ,vol. 40, pp. 161- 163 ,(1982) , 10.1063/1.93028