Chapter 2 The Electrical and Photoelectronic Properties of Semi-Insulating GaAs

摘要: Publisher Summary This chapter discusses the electrical and pholectric properties of semi-insulating gallium arsenide (GaAs) techniques required to measure these properties. Without a proper understanding techniques, it is impossible critically evaluate derived results. Because theoretical bases various characterization methods are often not discussed at length in relevant research papers, presents attempt do that for several cases interest. The two most basic parameters interest, normally, carrier concentration mobility. These quantities may be obtained from measurements current, field, applied magnetic field. also block diagram computer-controlled apparatus designed carry out Hall-effect photoelectronic on high resistivity samples. If sample conductivity dominated by only one type carrier, then simple analysis sufficient.