Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs
作者： K. Leosson , H. P. Gislason
DOI: 10.1557/PROC-442-453
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摘要: We present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to ionization of a double Cu Ga acceptor. employed plasma hydrogenation and lithium diffusion followed by reverse-bias zero-bias annealing passivate subsequently reactivate Cu-related levels. Deep-level current-transient spectroscopy measurements reveal that are independently reactivated, strongly indicating they arise from different defects.
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