Double Acceptor Behavior of Cu in Te‐Doped GaAs
作者： H. W. Allison , C. S. Fuller
DOI: 10.1063/1.1714522
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摘要: Ionization energy levels introduced in Te‐doped GaAs after conversion to p type by diffusion of 64Cu have been measured means Hall effect. Levels at 0.145, 0.166, 0.20, and 0.44 eV are observed various sequential heat treatments. The 0.145 attributed the two acceptor expected Cu on a Ga site. 0.20 level is assumed arise from vacancy as previously reported, 0.166 interpreted an ion pair between site Te As
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