Evidence for divacancy reaction in GaAs during Cu diffusion

摘要: It has been found that after diffusion of Cu64 into GaAs at ∼700°C or above, an almost equal conc. can be introduced 500°C provided the initial is below for saturation higher temperature. The Cu reacts with defects (presumably As vacancies) remaining from temperature diffusion. 1:1 correspondence between high and low temperatures taken as evidence initially divacancies.