Photoquenching and thermal recovery of a thermally stimulated current peak in semi‐insulating GaAs
作者： Z.‐Q. Fang , D. C. Look
DOI: 10.1063/1.353816
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摘要: A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photoquench under infrared illumination, and then recover at a rate r=2.0×108 exp(−0.26 eV/kT) s−1, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) EL2 are microscopically very similar, probably each with an AsGa core; or (2) electron trap only appears quench because controls lifetime. Several other traps show similar quenching recovery behavior.
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