Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss
作者： D. Kabiraj , Subhasis Ghosh
DOI: 10.1063/1.3534003
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摘要: We report on the application of high energy light ions (Li and O) irradiation for modification defects, in particular, annihilation point defects using electronic loss GaAs to minimize produced by nuclear collisions. The resolution x-ray diffraction micro-Raman spectroscopy have been used monitor that no lattice damage or amorphization take place due irradiating ions. effects their levels studied thermally stimulated current spectroscopy. It has observed till an optimum fluence 1013 ions/cm2 there is native but further increase results accumulation which scales with process, indicating rate binary collision process exceeds defect annihilation. Defect discussed basis breaking bonds en...
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