New AsGa related center in GaAs.
作者： D. C. Look , Z-Q. Fang , J. R. Sizelove , C. E. Stutz
DOI: 10.1103/PHYSREVLETT.70.465
关键词: Crystallographic defect 、 Thermal activation energy 、 Physics 、 Omega 、 Hyperfine structure 、 Magnetic circular dichroism 、 Center (category theory) 、 Condensed matter physics 、 Molecular beam 、 Energy (signal processing)
摘要: A new center related to ${\mathrm{As}}_{\mathrm{Ga}}$ has been found at relatively high concentrations (${10}^{17}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$) in semi-insulating (2\ifmmode\times\else\texttimes\fi{}${10}^{7}$ \ensuremath{\Omega} cm) molecular beam epitaxial GaAs grown 400 \ifmmode^\circ\else\textdegree\fi{}C. Although the ir photoquenching and thermal recovery characteristics are nearly identical those of EL2, activation energy is only 0.65\ifmmode\pm\else\textpm\fi{}0.01 eV, much lower than EL2 value 0.75\ifmmode\pm\else\textpm\fi{}0.01 eV. Other properties which different include electron-capture barrier energy, hyperfine constant, magnetic circular dichroism spectrum.
harvard.edu
sci-hub.se 参考文章(14)
Semi-Insulating III–V Materials Birkhäuser Boston. ,(1980) , 10.1007/978-1-4684-9193-7
M. O. Manasreh, D. W. Fischer, W. C. Mitchel, The EL2 Defect in GaAs: Some Recent Developments physica status solidi (b). ,vol. 154, pp. 11- 41 ,(1989) , 10.1002/PSSB.2221540102
Jaroslaw Dabrowski, Matthias Scheffler, Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2? Physical Review Letters. ,vol. 60, pp. 2183- 2186 ,(1988) , 10.1103/PHYSREVLETT.60.2183
D. J. Chadi, K. J. Chang, Metastability of the isolated arsenic-antisite defect in GaAs. Physical Review Letters. ,vol. 60, pp. 2187- 2190 ,(1988) , 10.1103/PHYSREVLETT.60.2187
H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. Huber, Identification of EL2 in GaAs Applied Physics Letters. ,vol. 47, pp. 970- 972 ,(1985) , 10.1063/1.95947
W. C. Mitchel, Gail J. Brown, Laura S. Rea, S. R. Smith, Deep levels in undoped horizontal Bridgman GaAs by Fourier transform photoconductivity and Hall effect Journal of Applied Physics. ,vol. 71, pp. 246- 251 ,(1992) , 10.1063/1.350750
D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, K. R. Evans, Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band Physical Review B. ,vol. 42, pp. 3578- 3581 ,(1990) , 10.1103/PHYSREVB.42.3578
D. C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove, Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C Journal of Applied Physics. ,vol. 71, pp. 5981- 5984 ,(1992) , 10.1063/1.350450
D. V. Lang, R. A. Logan, A study of deep levels in GaAs by capacitance spectroscopy Journal of Electronic Materials. ,vol. 4, pp. 1053- 1066 ,(1975) , 10.1007/BF02660189
A. Mitonneau, A. Mircea, G.M. Martin, D. Pons, Electron and hole capture cross-sections at deep centers in gallium arsenide Revue de Physique Appliquée. ,vol. 14, pp. 853- 861 ,(1979) , 10.1051/RPHYSAP:019790014010085300