Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs
作者： M. Taniguchi , T. Ikoma
DOI: 10.1063/1.331925
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摘要: We have characterized the midgap electron trap (so far believed to be EL2) in liquid encapsulated Czochralski GaAs by measuring deep level transient spectroscopy spectra, and found more than two traps which can classified into groups. A belonging first group is rather stable its properties other unstable. The capture cross section of levels latter varies continuously depth from surface also changed thermal annealing. discuss these characteristics connection with growth conditions.
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