Excitation photocapacitance study of EL2 in n-GaAs prepared by annealing under different arsenic vapor pressures
作者： Yutaka Oyama , Jun-ichi Nishizawa
DOI: 10.1063/1.1839635
关键词:
摘要: The excitation photocapacitance method was applied to n-GaAs:Te (n=4×1016cm−3) prepared by annealing under various excess arsenic vapor pressures. By changing the primary photon energies, emission spectra for EL20→EL2+ and EL2+→EL2++ transitions were determined. Considering electron capture processes of valence band (VB)→EL2+ (0.67eV) VB→EL2++ (0.47eV) at 77K, Frank–Condon shifts (dFC) annealed GaAs crystals determined EL2+ level on basis configuration coordinate model. It shown that lattice relaxation around EL2 is larger arsenic-poor conditions, thus it considered vacancies are closely related with atomic defect, in combination defects.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(28)
Sokrates T. Pantelides, Deep Centers in Semiconductors ,(1986)
Richard H. Bube, David Redfield, Photo-induced Defects in Semiconductors ,(1996)
David W. Fischer, Thermal recovery of photoquenchedEL2 infrared absorption in GaAs Physical Review B. ,vol. 37, pp. 2968- 2972 ,(1988) , 10.1103/PHYSREVB.37.2968
Akira Hida, Yutaka Mera, Koji Maeda, Identification of arsenic antisite defects with EL2 by nanospectroscopic studies of individual centers Physica B-condensed Matter. ,vol. 308, pp. 738- 741 ,(2001) , 10.1016/S0921-4526(01)00797-9
G. A. Baraff, M. Schluter, Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator ofEL2? Physical Review Letters. ,vol. 55, pp. 2340- 2343 ,(1985) , 10.1103/PHYSREVLETT.55.2340
P. W. Yu, G. D. Robinson, J. R. Sizelove, C. E. Stutz, 0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures. Physical Review B. ,vol. 49, pp. 4689- 4694 ,(1994) , 10.1103/PHYSREVB.49.4689
Masashi Ishii, Yoko Yoshino, Ken-ichi Takarabe, Osamu Shimomura, SITE-SELECTIVE X-RAY ABSORPTION FINE STRUCTURE : SELECTIVE OBSERVATION OF GA LOCAL STRUCTURE IN DX CENTER OF AL0.33GA0.67AS :SE Applied Physics Letters. ,vol. 74, pp. 2672- 2674 ,(1999) , 10.1063/1.123951
Jun‐ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki, Photocapacitance investigation of the ionized levels in n‐GaAs crystals and its association with the ‘‘photoquenching phenomenon’’ Journal of Applied Physics. ,vol. 75, pp. 4482- 4485 ,(1994) , 10.1063/1.355937
S. Dannefaer, D. Kerr, Vacancy interactions in GaAs Journal of Applied Physics. ,vol. 60, pp. 591- 594 ,(1986) , 10.1063/1.337452
G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais, G. Poiblaud, Compensation mechanisms in GaAs Journal of Applied Physics. ,vol. 51, pp. 2840- 2852 ,(1980) , 10.1063/1.327952