Vacancy interactions in GaAs
作者： S. Dannefaer , D. Kerr
DOI: 10.1063/1.337452
关键词: Annealing (metallurgy) 、 Doping 、 Vacancy defect 、 Materials science 、 Silicon 、 Impurity 、 Zinc 、 Analytical chemistry 、 Nuclear chemistry 、 Positron 、 Inorganic compound
摘要: Isochronal annealing of zinc‐ or silicon‐doped GaAs as well undoped semi‐insulating low‐resistivity materials has been investigated by positron lifetime measurements. For impurity concentrations larger than 4.5×1017 cm−3, only monovacancy complexes such ZnGaVAs, SiAsVGa, AsGaVGa are observed and they yield a 265±5 ps. less 1×1017 divacancies dominate 295±5 The grown‐in vacancies, either VAs VGa, both estimated to be in the range (1–4)×1017 cm−3.
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