Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
作者： Takeo Ohno , Yutaka Oyama
DOI: 10.1088/1468-6996/13/1/013002
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摘要: In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections precursors ultrahigh vacuum applied, junctions fabricated a combination device mesa wet etching MLE low-temperature area-selective regrowth. The on with normal orientation showed record peak current density 35 000 A cm-2. They can potentially be used as terahertz devices such injection transit time effect diode or an ideal static induction transistor.
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