Strain-induced Stranski-Krastanov three dimensional growth mode of GaSb quantum dot on GaAs substrate
作者： K. Fu , Y. Fu
DOI: 10.1063/1.3132054
关键词:
摘要: The growth dynamics of self-assembled GaSb quantum dots (QDs) on GaAs substrate was investigated using kinetic Monte Carlo method. strain induced by the lattice mismatch between epitaxial material and shown to be directly responsible for three-dimensional QD formation. Different geometries initial seeds surface which are equally favorable from an energy point view can result in different nanostructures (nanostrips nanoring).
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