Influence of MBE growth parameters on GaSb/GaAs quantum dot morphology
作者： Suresh K. Jangir , Hitendra K. Malik , Soni Kumari , Garima Upadhayaya , R. Raman
DOI: 10.1016/J.PHYSE.2019.113911
关键词:
摘要: Abstract In this paper, growth of self-assembled type-II GaSb/GaAs quantum dots by molecular beam epitaxy technique is presented. The effect various parameters such as substrate temperature, Sb/Ga equivalent pressure ratio, rate and total mono-layer coverage on surface morphology analyzed. GaSb exhibit high anisotropy along directions under specific conditions. discussed the basis incorporation background Arsenic anisotropic diffusion Gallium adatoms surface. low temperature photoluminescence measurements in GaAs capped samples show recombination wetting layer.
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