III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
作者： G. Balakrishnan , J. Tatebayashi , A. Khoshakhlagh , S. H. Huang , A. Jallipalli
DOI: 10.1063/1.2362999
关键词:
摘要: … In the following paragraphs, we demonstrate the ability to grow GaSb QDs in the SK growth mode as well as the IMF growth mode. The controlling growth parameter used for this …
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Anitha Jallipalli, G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, L.R. Dawson, D.L. Huffaker, Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si MRS Proceedings. ,vol. 934, pp. 1- 6 ,(2006) , 10.1557/PROC-0934-I09-05
Achim Trampert, Klaus H. Ploog, Eric Tournié, Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures Applied Physics Letters. ,vol. 73, pp. 1074- 1076 ,(1998) , 10.1063/1.122088
C. Mourad, D. Gianardi, K. J. Malloy, R. Kaspi, 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy Journal of Applied Physics. ,vol. 88, pp. 5543- 5546 ,(2000) , 10.1063/1.1319967
A.M. Rocher, Interfacial Dislocations in the GaSb/GaAs (001) Heterostructure Solid State Phenomena. pp. 563- 572 ,(1991) , 10.4028/WWW.SCIENTIFIC.NET/SSP.19-20.563
A. Trampert, E. Tournié, K. H. Ploog, NOVEL PLASTIC STRAIN-RELAXATION MODE IN HIGHLY MISMATCHED III-V LAYERS INDUCED BY TWO-DIMENSIONAL EPITAXIAL GROWTH Applied Physics Letters. ,vol. 66, pp. 2265- 2267 ,(1995) , 10.1063/1.113187
E. R. Glaser, B. R. Bennett, B. V. Shanabrook, R. Magno, Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures Applied Physics Letters. ,vol. 68, pp. 3614- 3616 ,(1996) , 10.1063/1.115747
K. Suzuki, Y. Arakawa, Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy Journal of Crystal Growth. ,vol. 201202, pp. 1205- 1208 ,(1999) , 10.1016/S0022-0248(99)00021-4
Motlan, E. M. Goldys, Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure Applied Physics Letters. ,vol. 79, pp. 2976- 2978 ,(2001) , 10.1063/1.1415351
F Hatami, NN Ledentsov, M Grundmann, J Böhrer, F Heinrichsdorff, M Beer, D Bimberg, SS Ruvimov, P Werner, U Gösele, J Heydenreich, U Richter, SV Ivanov, B Ya Meltser, PS Kop’Ev, Zh I Alferov, None, RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS Applied Physics Letters. ,vol. 67, pp. 656- 658 ,(1995) , 10.1063/1.115193
A Yu Babkevich, R A Cowley, N J Mason, A Stunault, X-ray scattering, dislocations and orthorhombic GaSb Journal of Physics: Condensed Matter. ,vol. 12, pp. 4747- 4756 ,(2000) , 10.1088/0953-8984/12/22/307