Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures
作者： A. Lenz , E. Tournié , J. Schuppang , M. Dähne , H. Eisele
DOI: 10.1063/1.4795020
关键词: Deposition (law) 、 Gallium arsenide 、 Nanotechnology 、 Optoelectronics 、 Nanolithography 、 Stoichiometry 、 Nanostructure 、 Scanning tunneling microscope 、 Nanoparticle 、 Materials science 、 Monolayer
摘要: Buried GaAs depositions in a GaSb(001) matrix with few monolayers (ML) thickness form nanometer size tensile-strained agglomerations. Cross-sectional scanning tunneling microscopy reveals case of 1 ML and 2 ML lateral sizes about 5–6 nm heights 6–8 ML, while the 3 ML 4 ML deposition increase to 9–11 nm 8–11 ML. The stoichiometry nanostructures is intermixed GaSb material, particularly for low amounts deposited GaAs. This investigation exhibits defect free growth GaAs/GaSb(001) demonstrates promising perspectives future developments Ga(In)As/GaSb(001) system.
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sci-hub.se 参考文章(25)
T. Taliercio, A. Gassenq, E. Luna, A. Trampert, E. Tournié, Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells Applied Physics Letters. ,vol. 96, pp. 062109- ,(2010) , 10.1063/1.3303821
H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots Applied Physics Letters. ,vol. 75, pp. 106- 108 ,(1999) , 10.1063/1.124290
E. Luna, B. Satpati, J. B. Rodriguez, A. N. Baranov, E. Tournié, A. Trampert, Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy Applied Physics Letters. ,vol. 96, pp. 021904- ,(2010) , 10.1063/1.3291666
H. Eisele, Ph. Ebert, N. Liu, A. L. Holmes, C.-K. Shih, Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots Applied Physics Letters. ,vol. 101, pp. 233107- ,(2012) , 10.1063/1.4769100
V. Holý, G. Springholz, M. Pinczolits, G. Bauer, Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices Physical Review Letters. ,vol. 83, pp. 356- 359 ,(1999) , 10.1103/PHYSREVLETT.83.356
Qianghua Xie, Anupam Madhukar, Ping Chen, Nobuhiko P. Kobayashi, Vertically Self-Organized InAs Quantum Box Islands on GaAs(100) Physical Review Letters. ,vol. 75, pp. 2542- 2545 ,(1995) , 10.1103/PHYSREVLETT.75.2542
R. Timm, J. Grabowski, H. Eisele, A. Lenz, S.K. Becker, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, M. Dähne, Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy Physica E-low-dimensional Systems & Nanostructures. ,vol. 26, pp. 231- 235 ,(2005) , 10.1016/J.PHYSE.2004.08.058
G. Balakrishnan, J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, A. Jallipalli, L. R. Dawson, D. L. Huffaker, III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Applied Physics Letters. ,vol. 89, pp. 161104- ,(2006) , 10.1063/1.2362999
Charles J. Reyner, Jin Wang, Kalyan Nunna, Andrew Lin, Baolai Liang, Mark S. Goorsky, D. L. Huffaker, Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction Applied Physics Letters. ,vol. 99, pp. 231906- ,(2011) , 10.1063/1.3666234
A. Gassenq, T. Taliercio, L. Cerutti, A.N. Baranov, E. Tournié, Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells Electronics Letters. ,vol. 45, pp. 1320- 1321 ,(2009) , 10.1049/EL.2009.2207