Highly tensile-strained Ge/InAlAs nanocomposites

作者: Oussama Moutanabbir , Austin J Akey , Tonio Buonassisi , Xiahan Sang , Joseph Faucher

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参考文章(22)
A. Lenz, E. Tournié, J. Schuppang, M. Dähne, H. Eisele, Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures Applied Physics Letters. ,vol. 102, pp. 102105- 102105 ,(2013) , 10.1063/1.4795020
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces Applied Physics Letters. ,vol. 63, pp. 3203- 3205 ,(1993) , 10.1063/1.110199
A. G. Norman, J. M. Olson, J. F. Geisz, H. R. Moutinho, A. Mason, M. M. Al-Jassim, S. M. Vernon, Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy Applied Physics Letters. ,vol. 74, pp. 1382- 1384 ,(1999) , 10.1063/1.123557
Ali Shakouri, Xuhui Sun, Xi Wang, Meyya Meyyappan, Bin Yu, Study of phonon modes in germanium nanowires Journal of Applied Physics. ,vol. 102, pp. 014304- ,(2007) , 10.1063/1.2752134
Moustafa El Kurdi, Guy Fishman, Sébastien Sauvage, Philippe Boucaud, Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism Journal of Applied Physics. ,vol. 107, pp. 013710- ,(2010) , 10.1063/1.3279307
M. W. Dashiell, U. Denker, C. Müller, G. Costantini, C. Manzano, K. Kern, O. G. Schmidt, Photoluminescence of ultrasmall Ge quantum dots grown by molecular- beam epitaxy at low temperatures Applied Physics Letters. ,vol. 80, pp. 1279- 1281 ,(2002) , 10.1063/1.1430508
J. Bardeen, W.H. Brattain, The transistor, a semi-conductor triode ,(1948)
Yijie Huo, Hai Lin, Robert Chen, Maria Makarova, Yiwen Rong, Mingyang Li, Theodore I. Kamins, Jelena Vuckovic, James S. Harris, Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Applied Physics Letters. ,vol. 98, pp. 011111- ,(2011) , 10.1063/1.3534785