Energy-Level Model for High-Resistivity Gallium Arsenide

摘要: ALTHOUGH gallium arsenide is usually prepared with low resistivities ( 106 ohm-cm.). This latter material can be produced by zone refining1, the addition of impurities such as oxygen1, or under growth conditions where main shallow donor, silicon, reduced below roughly one part per million1. To explain occurrence high-resistivity arsenide, Welker2 suggested that donors and acceptors are built into lattice in pairs. More recently, Allen3 has termed this ‘semi-insulating’, claims existence n-type requires there a very high degree compensation between donor deep acceptor. He also states because frequency resistivities, some mechanism automatic must operative. Later, to gradual transitions resistivity along floating-zone refined ingots, Gooch et al.4 have shown wide range still occur even on assuming compensation. However, according their model, vary ingot, yet cannot too much otherwise p-type predicted, which not observed.