Tantalum doping and high resistivity in aluminium antimonide

摘要: Aluminium antimonide crystals grown by the Czochralski method from melts doped with tantalum are found to have a lower residual acceptor concentration and increased free hole mobility than undoped melts. An investigation of effect on segregation particular impurities shows that will `getter' certain impurities, for example carbon copper. The mechanism is obscure. be abnormal. A value 0.80 has been obtained effective coefficient tellurium. Doping melt tellurium given n- p-type resistivities 104 1010 Ω cm at room temperature. variation resistivity temperature reveals presence levels activation energies 0.40 ev. 14.4 ± 1 static dielectric constant aluminium capacity measurements high crystals. Photoconductive decay times 0.5 msec observed in these