Characteristics of Deep Electron Levels in Oxygen‐Implanted and (Oxygen + Silicon) Co‐Implanted n‐GaAs
作者： Dang Tran Quan , A. Le Bloa , Z. Guennouni , P. N. Favennec
关键词:
摘要: Double correlation deep level transient spectroscopy (DDLTS) is used to study the centers in oxygen-implanted and (oxygen + silicon) co-implanted LEC n-GaAs samples range of 260 450 K. Two are detected characterized. One them related presence oxygen annihilated case silicon co-implantation. The behavior these defects their concentration variations with implantation parameters annealing treatments reported. Possible structures discussed. Les defauts profonds presents dans les echantillons de GaAs (LEC) type n implantes en oxygene et co-implantes silicium sont mis evidence caracterises le domaine temperatures a K utilisant la methode DDLTS. Un ces est lie l'oxygene disparaǐt apres une co-implantation silicium. Le comportement cesg fonction des conditions d'implantation traitements thermiques recuit etudies. La structure discutee.
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