Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocations
作者： Shintaro Miyazawa , Kazumi Wada
DOI: 10.1063/1.97018
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摘要: The effect of gate‐to‐pit distance on threshold votlage for GaAs field‐effect transistors was examined in detail the area around dislocated ‘‘lineage’’ boundaries. From this investigation, a clear dislocation proximity is recognized. most possible mechanism voltage shift presented referring to EL2 concentration increase at lineage and model formation previously reported. This proposes As‐interstitial dislocations, leaving region increased [VGa]/[VAs] ratio, responsible shift.
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