Liquid encapsulated, vertical Bridgman growth of GaAs crystal with uniform EL2 concentration

摘要: Abstract A novel method to improve the uniformity of EL2 distribution for liquid encapsulated, vertical Bridgman grown GaAs has been proposed. This is termed “ growth-furnace annealing ” and controls thermal history crystal by following procedures. First, kept at temperatures above 1100°C during growth prevent excess As incorporated into from precipitating on dislocations making a nonuniform interstitials which source EL2. When over, cooled down room temperature via generate done keeping uniform in whole crystal. These procedures make it possible give an identical as well under concentration interstitials. results throughout Thus, we demonstrated that achieved microscopic superior obtained so-called post-growth annealing.